Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W

Multiples: 1.0
Minimum quantity: 1.0
Product code: MMIX1F210N30P3
Manufacturer: IXYS
Manufacturer code: MMIX1F210N30P3
  • Mounting
  • Case
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Reverse recovery time
  • Gate charge

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Specification for Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W

Mounting SMD
Case SMPD
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Technology HiPerFET™, Polar3™
Drain-source voltage 300V
Drain current 108A
Pulsed drain current 550A
Power dissipation 520W
On-state resistance 16mΩ
Reverse recovery time 250ns
Gate charge 268nC