Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Multiples:
1.0
Minimum quantity:
1.0
Product code:
MMIX1F160N30T
Manufacturer: IXYS
Manufacturer code: MMIX1F160N30T
Specification for Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Mounting | SMD |
Case | SMPD |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | GigaMOS™, HiPerFET™, Trench™ |
Drain-source voltage | 300V |
Drain current | 102A |
Pulsed drain current | 440A |
Power dissipation | 570W |
On-state resistance | 20mΩ |
Reverse recovery time | 200ns |
Gate charge | 367nC |