Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
LGE3M60065Q
Manufacturer: LUGUANG ELECTRONIC
Manufacturer code: LGE3M60065Q
Product downloads
Specification for Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 650V |
Drain current | 36A |
Power dissipation | 208W |
On-state resistance | 75mΩ |
Gate charge | 78nC |