Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
LGE3M160120E
Manufacturer: LUGUANG ELECTRONIC
Manufacturer code: LGE3M160120E
Product downloads
Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W
Mounting | SMD |
Case | D2PAK |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | SiC |
Drain-source voltage | 1.2kV |
Drain current | 11A |
Pulsed drain current | 38A |
Power dissipation | 127W |
On-state resistance | 0.285Ω |
Gate charge | 42nC |