Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXYB82N120C3H1
    Manufacturer: IXYS
    Manufacturer code: IXYB82N120C3H1
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Technology
    • Technology
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Specification for Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.04kW; PLUS264™

    Mounting THT
    Case PLUS264™
    Kind of package tube
    Type of transistor IGBT
    Technology GenX3™, Planar, XPT™
    Turn-on time 119ns
    Power dissipation 1.04kW
    Gate-emitter voltage ±20V
    Pulsed collector current 320A
    Collector current 82A
    Gate charge 215nC
    Collector-emitter voltage 1.2kV
    Turn-off time 295ns