Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTT10N100D
    Manufacturer: IXYS
    Manufacturer code: IXTT10N100D
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268

    Mounting SMD
    Case TO268
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel depleted
    Drain-source voltage 1kV
    Drain current 10A
    Pulsed drain current 20A
    Power dissipation 400W
    On-state resistance 1.4Ω
    Reverse recovery time 850ns
    Gate charge 130nC