Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXTP4N80P
Manufacturer: IXYS
Manufacturer code: IXTP4N80P
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Reverse recovery time
  • Gate charge

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3.44 €

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Specification for Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W

Mounting THT
Case TO220AB
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices standard power mosfet
Technology PolarHV™
Drain-source voltage 800V
Drain current 3.6A
Pulsed drain current 8A
Power dissipation 100W
On-state resistance 3.4Ω
Reverse recovery time 560ns
Gate charge 14.2nC