Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTP2R4N120P
    Manufacturer: IXYS
    Manufacturer code: IXTP2R4N120P
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    6.99 € 6.99 € (wo VAT) 6.99 EUR

    6.99 €

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    Specification for Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W

    Mounting THT
    Case TO220AB
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Technology Polar™
    Drain-source voltage 1.2kV
    Drain current 2.4A
    Pulsed drain current 6A
    Power dissipation 125W
    On-state resistance 7.5Ω
    Reverse recovery time 920ns
    Gate charge 37nC