Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTP1R4N100P
    Manufacturer: IXYS
    Manufacturer code: IXTP1R4N100P
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W

    Mounting THT
    Case TO220AB
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Technology Polar™
    Drain-source voltage 1kV
    Drain current 1.4A
    Pulsed drain current 3A
    Power dissipation 63W
    On-state resistance 11.8Ω
    Reverse recovery time 750ns
    Gate charge 17.8nC