Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
IXTH2R4N120P
Manufacturer: IXYS
Manufacturer code: IXTH2R4N120P
Product downloads
Specification for Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Mounting | THT |
Case | TO247-3 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | standard power mosfet |
Technology | Polar™ |
Drain-source voltage | 1.2kV |
Drain current | 2.4A |
Pulsed drain current | 6A |
Power dissipation | 125W |
On-state resistance | 7.5Ω |
Reverse recovery time | 920ns |
Gate charge | 37nC |