Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTH1N200P3
    Manufacturer: IXYS
    Manufacturer code: IXTH1N200P3
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time

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    Specification for Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247-3; 2.3us

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Drain-source voltage 2kV
    Drain current 1A
    Power dissipation 125W
    On-state resistance 40Ω
    Reverse recovery time 2.3µs