Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTH05N250P3HV
    Manufacturer: IXYS
    Manufacturer code: IXTH05N250P3HV
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; Polar3™; unipolar; 2.5kV; 0.33A; Idm: 1A; 104W

    Mounting THT
    Case TO247HV
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Technology Polar3™
    Drain-source voltage 2.5kV
    Drain current 0.33A
    Pulsed drain current 1A
    Power dissipation 104W
    On-state resistance 110Ω
    Reverse recovery time 1.2µs
    Gate charge 10.5nC