Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; ISOPLUS i4-pac™

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTF6N200P3
    Manufacturer: IXYS
    Manufacturer code: IXTF6N200P3
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 2kV; 4A; 215W; ISOPLUS i4-pac™

    Mounting THT
    Case ISOPLUS i4-pac™ x024c
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Drain-source voltage 2kV
    Drain current 4A
    Power dissipation 215W
    Reverse recovery time 520ns
    Gate charge 143nC