Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXTA60N20T
Manufacturer: IXYS
Manufacturer code: IXTA60N20T
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • On-state resistance
  • Reverse recovery time
  • Gate charge

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6.23 €

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Specification for Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO263; 118ns

Mounting SMD
Case TO263
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices thrench gate power mosfet
Drain-source voltage 200V
Drain current 60A
Power dissipation 500W
On-state resistance 40mΩ
Reverse recovery time 118ns
Gate charge 73nC