Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXGT6N170A
    Manufacturer: IXYS
    Manufacturer code: IXGT6N170A
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Specification for Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268; Features: high voltage

    Mounting SMD
    Case TO268
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology NPT
    Turn-on time 91ns
    Power dissipation 75W
    Gate-emitter voltage ±20V
    Pulsed collector current 14A
    Collector current 3A
    Gate charge 18.5nC
    Collector-emitter voltage 1.7kV
    Turn-off time 271ns