Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXGT10N170
    Manufacturer: IXYS
    Manufacturer code: IXGT10N170
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Specification for Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO268

    Mounting SMD
    Case TO268
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology NPT
    Power dissipation 110W
    Gate-emitter voltage ±20V
    Pulsed collector current 70A
    Collector current 10A
    Gate charge 32nC
    Collector-emitter voltage 1.7kV
    Turn-off time 630ns