Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFP4N100PM
    Manufacturer: IXYS
    Manufacturer code: IXFP4N100PM
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W

    Mounting THT
    Case TO220FP
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology HiPerFET™, Polar™
    Drain-source voltage 1kV
    Drain current 2.1A
    Pulsed drain current 8A
    Power dissipation 40W
    On-state resistance 3.3Ω
    Reverse recovery time 300ns
    Gate charge 26nC