Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFK360N15T2
    Manufacturer: IXYS
    Manufacturer code: IXFK360N15T2
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264

    Mounting THT
    Case TO264
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology GigaMOS™, HiPerFET™, TrenchT2™
    Drain-source voltage 150V
    Drain current 360A
    Power dissipation 1670W
    On-state resistance 4mΩ
    Reverse recovery time 150ns
    Gate charge 715nC