Transistor: N-MOSFET; X2-Class; unipolar; 600V; 60A; Idm: 120A; 780W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFH60N60X2A
    Manufacturer: IXYS
    Manufacturer code: IXFH60N60X2A
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Technology
    • Drain-source voltage
    • Application
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; X2-Class; unipolar; 600V; 60A; Idm: 120A; 780W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ultra junction x-class
    Technology HiPerFET™, X2-Class
    Drain-source voltage 600V
    Application automotive industry
    Drain current 60A
    Pulsed drain current 120A
    Power dissipation 780W
    On-state resistance 52mΩ
    Reverse recovery time 180ns
    Gate charge 108nC