Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV

    Multiples: 300.0
    Minimum quantity: 300.0
    Product code: IXBX50N360HV
    Manufacturer: IXYS
    Manufacturer code: IXBX50N360HV
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Collector-emitter voltage
    • Turn-off time

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    Specification for Transistor: IGBT; BiMOSFET™; 3.6kV; 50A; 660W; TO247HV

    Mounting THT
    Case TO247HV
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 889ns
    Power dissipation 660W
    Gate-emitter voltage ±20V
    Pulsed collector current 420A
    Collector current 50A
    Collector-emitter voltage 3.6kV
    Turn-off time 1.88µs