Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXBT42N300HV
    Manufacturer: IXYS
    Manufacturer code: IXBT42N300HV
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    60.84 € 60.84 € (wo VAT) 60.84 EUR

    60.84 €

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    Specification for Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV

    Mounting SMD
    Case TO268HV
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 652ns
    Power dissipation 500W
    Gate-emitter voltage ±20V
    Pulsed collector current 400A
    Collector current 42A
    Gate charge 200nC
    Collector-emitter voltage 3kV
    Turn-off time 950ns