Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPT029N08N5ATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPT029N08N5ATMA1
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 676A; 167W

    Mounting SMD
    Case PG-HSOF-8
    Kind of package tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™ 5
    Drain-source voltage 80V
    Drain current 120A
    Pulsed drain current 676A
    Power dissipation 167W
    On-state resistance 2.9mΩ
    Gate charge 70nC