Transistor: N-MOSFET; unipolar; 80V; 279A; Idm: 1200A; 375W

Multiples: 1.0
Minimum quantity: 1.0
Product code: IPT012N08N5ATMA1
Manufacturer: INFINEON TECHNOLOGIES
Manufacturer code: IPT012N08N5ATMA1
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 80V; 279A; Idm: 1200A; 375W

Mounting SMD
Case PG-HSOF-8
Kind of package tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Technology OptiMOS™ 5
Drain-source voltage 80V
Drain current 279A
Pulsed drain current 1.2kA
Power dissipation 375W
On-state resistance 1.2mΩ
Gate charge 178nC