Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPD80R2K0P7ATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPD80R2K0P7ATMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    1.76 €

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    Specification for Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3

    Mounting SMD
    Case PG-TO252-3
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Technology CoolMOS™ P7
    Drain-source voltage 800V
    Drain current 1.9A
    Power dissipation 24W
    On-state resistance 2Ω
    Gate charge 9nC