Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Multiples:
1.0
Minimum quantity:
1.0
Product code:
IPD60R600P7ATMA1
Manufacturer: INFINEON TECHNOLOGIES
Manufacturer code: IPD60R600P7ATMA1
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Specification for Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Mounting | SMD |
Case | PG-TO252-3 |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |
Technology | CoolMOS™ P7 |
Drain-source voltage | 600V |
Drain current | 4A |
Pulsed drain current | 16A |
Power dissipation | 30W |
On-state resistance | 600mΩ |
Gate-source voltage | ±20V |
Gate charge | 9nC |