Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W

Multiples: 1.0
Minimum quantity: 1.0
Product code: IPD50P04P4L11ATMA2
Manufacturer: INFINEON TECHNOLOGIES
Manufacturer code: IPD50P04P4L11ATMA2
  • Mounting
  • Case
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W

Mounting SMD
Case PG-TO252-3-313
Polarisation unipolar
Type of transistor P-MOSFET
Kind of channel enhanced
Technology OptiMOS® -P2
Drain-source voltage -40V
Drain current -40A
Pulsed drain current -200A
Power dissipation 58W
On-state resistance 10.6mΩ
Gate charge 14nC