Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3

    Multiples: 2500.0
    Minimum quantity: 2500.0
    Product code: IPD26N06S2L35ATMA2
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPD26N06S2L35ATMA2
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3

    Mounting SMD
    Case PG-TO252-3
    Kind of package reel
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™
    Drain-source voltage 55V
    Drain current 22A
    Pulsed drain current 120A
    Power dissipation 68W
    On-state resistance 35mΩ
    Gate charge 10nC