Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3

Multiples: 1.0
Minimum quantity: 1.0
Product code: IPB80N06S2L07ATMA3
Manufacturer: INFINEON TECHNOLOGIES
Manufacturer code: IPB80N06S2L07ATMA3
  • Mounting
  • Case
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3

Mounting SMD
Case PG-TO263-3
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Technology OptiMOS™
Drain-source voltage 55V
Drain current 80A
Power dissipation 210W
On-state resistance 6.7mΩ
Gate charge 95nC