Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IMW120R014M1HXKSA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IMW120R014M1HXKSA1
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Power dissipation
    • On-state resistance

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 89.3A; Idm: 267.9A; 227W

    Mounting THT
    Case TO247
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology CoolSiC™, SiC
    Drain-source voltage 1.2kV
    Power dissipation 227W
    On-state resistance 27mΩ