Transistor: N-JFET; CoolGaN™; unipolar; 600V; 12.5A; Idm: 23A; 55.5W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IGT60R190D1SATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IGT60R190D1SATMA1
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Gate current
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    14.82 € 14.82 € (wo VAT) 14.82 EUR

    14.82 €

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    Specification for Transistor: N-JFET; CoolGaN™; unipolar; 600V; 12.5A; Idm: 23A; 55.5W

    Mounting SMD
    Case PG-HSOF-8-3
    Kind of package tape
    Polarisation unipolar
    Type of transistor N-JFET
    Kind of channel enhanced
    Gate current 7.7mA
    Technology CoolGaN™
    Drain-source voltage 600V
    Drain current 12.5A
    Pulsed drain current 23A
    Power dissipation 55.5W
    On-state resistance 190mΩ
    Gate charge 3.2nC