Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 33.4A

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: GAN041-650WSBQ
    Manufacturer: NEXPERIA
    Manufacturer code: GAN041-650WSBQ
    • Mounting
    • Case
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Technology
    • Drain-source voltage
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge
    • Kind of transistor

    18.28 € 18.28 € (wo VAT) 18.28 EUR

    18.28 €

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    Specification for Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 33.4A

    Mounting THT
    Case SOT429, TO247
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-JFET/N-MOSFET
    Technology GaN
    Drain-source voltage 650V
    Pulsed drain current 240A
    Power dissipation 187W
    On-state resistance 35mΩ
    Gate charge 22nC
    Kind of transistor cascode