Transistor: N-MOSFET; unipolar; 60V; 37.1A; Idm: 210A; 121W; TO220-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: FQP50N06L
    Manufacturer: ON SEMICONDUCTOR
    Manufacturer code: FQP50N06L
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 60V; 37.1A; Idm: 210A; 121W; TO220-3

    Mounting THT
    Case TO220-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology QFET®
    Drain-source voltage 60V
    Drain current 37.1A
    Pulsed drain current 210A
    Power dissipation 121W
    On-state resistance 21mΩ
    Gate charge 24.5nC