Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK

Multiples: 1.0
Minimum quantity: 1.0
Product code: FDB024N06
Manufacturer: ON SEMICONDUCTOR
Manufacturer code: FDB024N06
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK

Mounting SMD
Case D2PAK
Kind of package reel, tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Drain-source voltage 60V
Drain current 190A
Power dissipation 395W
On-state resistance 2.4mΩ
Gate charge 226nC