Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK

    Multiples: 800.0
    Minimum quantity: 800.0
    Product code: FCB11N60TM
    Manufacturer: ONSEMI
    Manufacturer code: FCB11N60TM
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK

    Mounting SMD
    Case D2PAK
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SuperFET®
    Drain-source voltage 600V
    Drain current 7A
    Pulsed drain current 33A
    Power dissipation 125W
    On-state resistance 380mΩ
    Gate charge 52nC