Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8

    Multiples: 1.0
    Minimum quantity: 3.0
    Product code: ECH8657-TL-H
    Manufacturer: ON SEMICONDUCTOR
    Manufacturer code: ECH8657-TL-H
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8

    Mounting SMD
    Case ECH8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Drain-source voltage 35V
    Drain current 4.5A
    Pulsed drain current 30A
    Power dissipation 1.5W
    On-state resistance 59mΩ
    Gate charge 4.6nC