Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W

    Multiples: 1.0
    Minimum quantity: 10000.0
    Product code: DMN63D8LDW-13
    Manufacturer: DIODES INCORPORATED
    Manufacturer code: DMN63D8LDW-13
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

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    Specification for Transistor: N-MOSFET x2; unipolar; 30V; 0.17A; Idm: 0.8A; 0.4W

    Mounting SMD
    Case SOT363
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Drain-source voltage 30V
    Drain current 170mA
    Pulsed drain current 800mA
    Power dissipation 400mW
    On-state resistance 4.5Ω