Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8

Multiples: 1.0
Minimum quantity: 1.0
Product code: DI7A6N10SQ
Manufacturer: DIOTEC SEMICONDUCTOR
Manufacturer code: DI7A6N10SQ
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8

Mounting SMD
Case SO8
Kind of package reel, tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Drain-source voltage 100V
Drain current 7.6A
Pulsed drain current 200A
Power dissipation 2.5W
On-state resistance 28mΩ
Gate charge 22nC