Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 12A; 1.4W; QFN2X2

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: DI2A8N03PWK2
    Manufacturer: DIOTEC SEMICONDUCTOR
    Manufacturer code: DI2A8N03PWK2
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 12A; 1.4W; QFN2X2

    Mounting SMD
    Case QFN2X2
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Drain-source voltage 30V
    Drain current 3A
    Pulsed drain current 12A
    Power dissipation 1.4W
    On-state resistance 0.102Ω
    Gate charge 6.8nC