Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A

    Multiples: 5.0
    Minimum quantity: 5.0
    Product code: BSS123W
    Manufacturer: YANGJIE TECHNOLOGY
    Manufacturer code: BSS123W
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A

    Mounting SMD
    Case SOT323
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TRENCH POWER MV
    Drain-source voltage 100V
    Drain current 160mA
    Pulsed drain current 800mA
    Power dissipation 350mW
    On-state resistance 5.5Ω
    Gate charge 2.5nC