Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8

Multiples: 1.0
Minimum quantity: 1.0
Product code: BSO613SPVGXUMA1
Manufacturer: INFINEON TECHNOLOGIES
Manufacturer code: BSO613SPVGXUMA1
  • Mounting
  • Case
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance

0.00 € 0.00 € (wo VAT) 0.0 EUR

0.00 €

This combination does not exist.

Add to Cart

Specification for Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8

Mounting SMD
Case SO8
Polarisation unipolar
Type of transistor P-MOSFET
Kind of channel enhanced
Technology SIPMOS™
Drain-source voltage -60V
Drain current -3.44A
Pulsed drain current -13.8A
Power dissipation 2.5W
On-state resistance 130mΩ