ROHM - BSM180D12P3C007 - Silicon Carbide MOSFET, Half-Bridge Module, Dual N Channel, 180 A, 1.2 kV
Multiples:
1.0
Minimum quantity:
1.0
Product code:
BSM180D12P3C007
Manufacturer: ROHM SEMICONDUCTOR
Manufacturer code: BSM180D12P3C007
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Specification for ROHM - BSM180D12P3C007 - Silicon Carbide MOSFET, Half-Bridge Module, Dual N Channel, 180 A, 1.2 kV
| Max operating temperature | 150°C |