Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ

Multiples: 1.0
Minimum quantity: 1.0
Product code: AOT20B65M1
Manufacturer: ALPHA & OMEGA SEMICONDUCTOR
Manufacturer code: AOT20B65M1
  • Mounting
  • Case
  • Kind of package
  • Type of transistor
  • Turn-on time
  • Power dissipation
  • Gate-emitter voltage
  • Pulsed collector current
  • Collector current
  • Gate charge
  • Collector-emitter voltage
  • Turn-off time
  • Turn-off switching energy
  • Turn-on switching energy
  • Collector-emitter saturation voltage

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Specification for Transistor: IGBT; 650V; 20A; 114W; TO220; Eoff: 0.27mJ; Eon: 0.47mJ

Mounting THT
Case TO220
Kind of package tube
Type of transistor IGBT
Turn-on time 51ns
Power dissipation 114W
Gate-emitter voltage ±30V
Pulsed collector current 60A
Collector current 20A
Gate charge 46nC
Collector-emitter voltage 650V
Turn-off time 135ns
Turn-off switching energy 0.27mJ
Turn-on switching energy 0.47mJ
Collector-emitter saturation voltage 1.7V