Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Multiples:
1000.0
Minimum quantity:
1000.0
Product code:
AOT10B65M1
Manufacturer: ALPHA & OMEGA SEMICONDUCTOR
Manufacturer code: AOT10B65M1
Product downloads
Specification for Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Mounting | THT |
Case | TO220 |
Kind of package | tube |
Type of transistor | IGBT |
Turn-on time | 27ns |
Power dissipation | 75W |
Gate-emitter voltage | ±30V |
Pulsed collector current | 30A |
Collector current | 10A |
Gate charge | 24nC |
Collector-emitter voltage | 650V |
Turn-off time | 137ns |
Turn-off switching energy | 0.13mJ |
Turn-on switching energy | 0.18mJ |
Collector-emitter saturation voltage | 1.6V |