Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
Multiples:
1.0
Minimum quantity:
1.0
Product code:
AOD5B65N1
Manufacturer: ALPHA & OMEGA SEMICONDUCTOR
Manufacturer code: AOD5B65N1
Product downloads
Specification for Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
Mounting | SMD |
Case | TO252 |
Kind of package | reel, tape |
Type of transistor | IGBT |
Turn-on time | 23ns |
Power dissipation | 21W |
Gate-emitter voltage | ±30V |
Pulsed collector current | 15A |
Collector current | 5A |
Gate charge | 9.2nC |
Collector-emitter voltage | 650V |
Turn-off time | 114ns |
Turn-off switching energy | 0.049mJ |
Turn-on switching energy | 0.081mJ |
Collector-emitter saturation voltage | 2.5V |