Transistor: IGBT; 650V; 40A; 119W; D2PAK

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: AFGB40T65SQDN
    Manufacturer: ONSEMI
    Manufacturer code: AFGB40T65SQDN
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Type of transistor
    • Number of pins
    • Application
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage

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    Specification for Transistor: IGBT; 650V; 40A; 119W; D2PAK

    Mounting SMD
    Case D2PAK
    Kind of package reel, tape
    Type of transistor IGBT
    Number of pins 3
    Application automotive industry
    Power dissipation 119W
    Gate-emitter voltage ±20V
    Pulsed collector current 160A
    Collector current 40A
    Gate charge 76nC
    Collector-emitter voltage 650V