Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: YJS12N10A
    Tootja: YANGJIE TECHNOLOGY
    Tootja tootekood: YJS12N10A
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A

    Mounting SMD
    Case SOP8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SPLIT GATE TRENCH
    Drain-source voltage 100V
    Drain current 7.6A
    Pulsed drain current 120A
    Power dissipation 3.3W
    On-state resistance 17mΩ
    Gate charge 80nC