Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

    Kordarv: 1.0
    Minimum quantity: 3.0
    Tootekood: YJD80G06A
    Tootja: YANGJIE TECHNOLOGY
    Tootja tootekood: YJD80G06A
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0,00 € 0,00 € (KM-TA) 0.0 EUR

    0,00 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Product downloads

    Spetsifikatsioon tootele Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

    Mounting SMD
    Case TO252
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SPLIT GATE TRENCH
    Drain-source voltage 60V
    Drain current 56A
    Pulsed drain current 240A
    Power dissipation 42.5W
    On-state resistance 11mΩ
    Gate charge 31nC