Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 95A; 59W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: YJB150G06AK
    Tootja: YANGJIE TECHNOLOGY
    Tootja tootekood: YJB150G06AK
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0,00 € 0,00 € (KM-TA) 0.0 EUR

    0,00 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Product downloads

    Spetsifikatsioon tootele Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 95A; 59W

    Mounting SMD
    Case TO263
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Technology SPLIT GATE TRENCH
    Drain-source voltage 60V
    Drain current 95A
    Pulsed drain current 450A
    Power dissipation 59W
    On-state resistance 4.8mΩ
    Gate charge 71nC