Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: TSG65N068CE RVG
    Tootja: TAIWAN SEMICONDUCTOR
    Tootja tootekood: TSG65N068CE RVG
    • Mounting
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance
    • Gate charge

    0,00 € 0,00 € (KM-TA) 0.0 EUR

    0,00 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Spetsifikatsioon tootele Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88

    Mounting SMD
    Kind of package tape
    Polarisation unipolar
    Type of transistor N-JFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology GaN
    Drain-source voltage 650V
    Drain current 30A
    Pulsed drain current 60A
    On-state resistance 68mΩ
    Gate charge 6.7nC