Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SIS862DN-T1-GE3
    Tootja: VISHAY
    Tootja tootekood: SIS862DN-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

    0,00 € 0,00 € (KM-TA) 0.0 EUR

    0,00 €

    Seda kombinatsiooni ei eksisteeri.

    Lisa ostukorvi

    Product downloads

    Spetsifikatsioon tootele Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W

    Mounting SMD
    Case PowerPAK® 1212-8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage 60V
    Drain current 40A
    Pulsed drain current 100A
    Power dissipation 52W
    On-state resistance 12.5mΩ